| 1. | It is designed and fabricated with the 0 . 25 um cmos process
年，设计及生产工艺为0 . 25 |
| 2. | Fabricated with 0 . 18um cmos process
实现工艺为： |
| 3. | Fabricated in 0 . 35 um cmos process
工艺流片生产 |
| 4. | Implemented with 0 . 18 cmos process
实现工艺： |
| 5. | Then the circuit is successfully implemented in standard 0 . 6um cmos process
所设计的电路在上华0 . 6 m标准cmos工艺线上流片成功。 |
| 6. | In addition , the bicmos process of sige device is compatible with cmos process of si device . 2
在工艺上, sige器件可以采用bicmos技术,很好地实现了与cmos技术的兼容。 |
| 7. | This chip has been implemented in the smic 0 . 18 m cmos process with single - poly , six - metal and mim capacitors
该芯片在smic单层多晶, 6层金属, n阱0 . 18 m标准cmos工艺线上一次流片成功。 |
| 8. | The clock recovery system is fabricated in tsmc 0 . 25um cmos process . simulation in smartspice shows that the circuit as expected
设计中采用tsmc0 . 25umcmos工艺，用smartspice进行设计仿真和优化。 |
| 9. | The temperature characteristics of mosfet , the configuration of mosfet capacitor and mosfet analog switch , based on cmos process , were researched
分析了cmos工艺下mos器件的温度特性,对mos电容和mos模拟开关的结构做了研究。 |
| 10. | The 256 photodiodes arrayed 4 quadrants sensor is designed and fabricated in 0 . 6 u m double metal double poly standard cmos process
本研究中的256光电管阵列四象限光电传感器采用了上华0 . 6 m两层金属两层多晶硅cmos标准工艺制造。 |
